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 4N25, 4N26, 4N27, 4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A C NC 1 2 3 6B 5C 4E
* Isolation test voltage 5000 VRMS * Interfaces with common logic families * Input-output coupling capacitance < 0.5 pF * Industry standard dual-in-line 6 pin package * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
21842
i179004-5
APPLICATIONS
* AC mains detection * Reed relay driving
DESCRIPTION
The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25, 4N26, 4N27, 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
* Switch mode power supply feedback * Telephone ring detection * Logic ground isolation * Logic coupling with high frequency noise rejection
AGENCY APPROVALS
* UL1577, file no. E52744 * BSI: EN 60065:2002, EN 60950:2000 * FIMKO: EN 60950, EN 60065, EN 60335
ORDER INFORMATION
PART 4N25 4N26 4N27 4N28 REMARKS CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 10 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage Collector current Power dissipation
(1)
TEST CONDITION
SYMBOL VR IF
VALUE 5 60 3 100 70 7 50 100 150
UNIT V mA A mW V V mA mA mW
t 10 s
IFSM Pdiss VCEO VEBO IC
t 1 ms
IC Pdiss
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83725 Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER COUPLER Isolation test voltage Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance Storage temperature Operating temperature Junction temperature Soldering temperature (2) max.10 s dip soldering: distance to seating plane 1.5 mm DIN IEC 112/VDE 0303, part 1 VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C RIO RIO Tstg Tamb Tj Tsld VISO 5000 7 7 0.4 175 1012 1011 - 55 to + 125 - 55 to + 100 125 260 C C C C VRMS mm mm mm
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER INPUT Forward voltage (2) Reverse current (2) Capacitance OUTPUT Collector base breakdown voltage (2) Collector emitter breakdown voltage (2) Emitter collector breakdown voltage (2) IC = 100 A IC = 1 mA IE = 100 A 4N25 ICEO(dark) (2) VCE = 10 V, (base open) 4N26 4N27 4N28 ICBO(dark) (2) Collector emitter capacitance COUPLER Isolation test voltage (2) Saturation voltage, collector emitter Resistance, input output (2) Capacitance, input output Peak, 60 Hz ICE = 2 mA, IF = 50 mA VIO = 500 V f = 1 MHz VIO VCE(sat) RIO CIO 100 0.6 5000 0.5 V V G pF VCB = 10 V, (emitter open) VCE = 0 CCE BVCBO BVCEO BVECO 70 30 7 5 5 5 10 2 6 50 50 50 100 20 V V V nA nA nA nA nA pF IF = 50 mA VR = 3 V VR = 0 V VF IR CO 1.3 0.1 25 1.5 100 V A pF TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Notes (1) T amb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
Document Number: 83725 Rev. 1.8, 07-Jan-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com 133
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
(1)
TEST CONDITION
PART 4N25 4N26 4N27 4N28
SYMBOL CTRDC CTRDC CTRDC CTRDC
MIN. 20 20 10 10
TYP. 50 50 30 30
MAX.
UNIT % % % %
DC current transfer ratio
VCE = 10 V, IF = 10 mA
Note (1) Indicates JEDEC registered values.
SWITCHING CHARACTERISTICS
PARAMETER Rise and fall times TEST CONDITION VCE = 10 V, IF = 10 mA, RL = 100 SYMBOL tr, tf MIN. TYP. 2 MAX. UNIT s
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
1.4
1.5
VF -Forward Voltage (V)
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 1
NCTR - Normalized CTR
TA = - 55 C TA = 25 C
Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 50 C
0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100
TA = 85 C
10
100
i4n25_01
IF - Forward Current (mA)
i4n25_03
IF - LED Current (mA)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current
1.5
NCTR - Normalized CTR
1.0 TA = 25 C
NCTR - Normalized CTR
Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) = 0.4 V
1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 70 C
0.5 NCTR(SAT) NCTR 0.0 0 1 10 100
0.5 NCTR(SAT) NCTR 0.0 0.1
i4n25_04
1
10
100
i4n25_02
IF - LED Current (mA)
IF - LED Current (mA)
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83725 Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection
1.5
NCTRcb - Normalized CTRcb
NCTR - Normalized CTR
Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 85 C
1.5 Normalized to: VCB = 9.3 V, IF = 10 mA, TA = 25 C 1.0
0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100
0.5 25 C 50 C 70 C 0.0 0.1 1 10 100
i4n25_05
IF - LED Current (mA)
i4n25_08
IF - LED Current (mA)
Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current
Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
35
10
ICE - Collector Current (mA)
25 20 15 25 C 10 5 0 0 10
Normalized Photocurrent
30 50 C 70 C 85 C
Normalized to: IF = 10 mA, TA = 25 C 1
1 0. Nib, TA = - 20 C Nib, TA = 20 C Nib, TA = 50 C Nib, TA = 70 C 0.01 0.1 1 10 100
20
30
40
50
60
i4n25_06
IF - LED Current (mA)
i4n25_09
IF - LED Current (mA)
Fig. 6 - Collector Emitter Current vs. Temperature and LED Current
Fig. 9 - Normalized Photocurrent vs. IF and Temperature
105
1.2
70 C
ICEO - Collector Emitter (nA)
104
NhFE - Normalized hFE
103 10
2
1.0 25 C - 20 C 0.8 Normalized to: IB = 20 A, VCE = 10 V, TA = 25 C
VCE = 10 V 101 100 10- 1 10- 2 - 20 0 20 40 60 80 100 Typical
0.6
0.4 1
i4n25_10
10
100
1000
i4n25_07
Tamb- Ambient Temperature (C)
Ib - Base Current (A)
Fig. 7 - Collector Emitter Leakage Current vs. Temperature
Fig. 10 - Normalized Non-Saturated hFE vs. Base Current and Temperature
Document Number: 83725 Rev. 1.8, 07-Jan-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com 135
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
NhFE(sat) - Normalized Saturated hFE
1.5 Normalized to: VCE = 10 V, Ib = 20 A TA = 25 C f = 10 kHz DF = 50 %
VCC = 5 V
70 C 50 C 1.0 25 C - 20 C 0.5 VCE = 0.4 V 0.0 1
i4n25_11
RL VO
IF = 10 mA
10
100
1000
i4n25_14
Ib - Base Current (A)
Fig. 14 - Switching Schematic
Fig. 11 - Normalized hFE vs. Base Current and Temperature
1000
2.5
tPLH- Propagation Delay (s)
tPHL 100
2.0
10 tPLH
1.5
1 0.1
i4n25_12
1
10
1.0 100
RL - Collector Load Resistor (k)
Fig. 12 - Propagation Delay vs. Collector Load Resistor
IF
tD VO tR tPLH VTH = 1.5 V tPHL
i4n25_13
tS
tF
Fig. 13 - Switching Timing
tPHL - Propagation Delay (s)
IF = 10 mA, TA = 25 C VCC = 5.0 V, Vth = 1.5 V
www.vishay.com 136
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83725 Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection
PACKAGE DIMENSIONS in millimeters
7.62 typ. 7.12 0.3 6.5 0.3 3.5 0.3
4.5 0.3 4.5 0.3 0.25 7.62 to 9.5 typ.
0.5 0.1 1.2 0.1 6 5 4
14771_2
1
23
PACKAGE MARKING
4N25 V YWW 24
21764-25
2.8 0.15
Document Number: 83725 Rev. 1.8, 07-Jan-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com 137
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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