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4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES A C NC 1 2 3 6B 5C 4E * Isolation test voltage 5000 VRMS * Interfaces with common logic families * Input-output coupling capacitance < 0.5 pF * Industry standard dual-in-line 6 pin package * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842 i179004-5 APPLICATIONS * AC mains detection * Reed relay driving DESCRIPTION The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25, 4N26, 4N27, 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. * Switch mode power supply feedback * Telephone ring detection * Logic ground isolation * Logic coupling with high frequency noise rejection AGENCY APPROVALS * UL1577, file no. E52744 * BSI: EN 60065:2002, EN 60950:2000 * FIMKO: EN 60950, EN 60065, EN 60335 ORDER INFORMATION PART 4N25 4N26 4N27 4N28 REMARKS CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 10 %, DIP-6 ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage Collector current Power dissipation (1) TEST CONDITION SYMBOL VR IF VALUE 5 60 3 100 70 7 50 100 150 UNIT V mA A mW V V mA mA mW t 10 s IFSM Pdiss VCEO VEBO IC t 1 ms IC Pdiss www.vishay.com 132 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83725 Rev. 1.8, 07-Jan-10 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER COUPLER Isolation test voltage Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance Storage temperature Operating temperature Junction temperature Soldering temperature (2) max.10 s dip soldering: distance to seating plane 1.5 mm DIN IEC 112/VDE 0303, part 1 VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C RIO RIO Tstg Tamb Tj Tsld VISO 5000 7 7 0.4 175 1012 1011 - 55 to + 125 - 55 to + 100 125 260 C C C C VRMS mm mm mm (1) TEST CONDITION SYMBOL VALUE UNIT Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (1) PARAMETER INPUT Forward voltage (2) Reverse current (2) Capacitance OUTPUT Collector base breakdown voltage (2) Collector emitter breakdown voltage (2) Emitter collector breakdown voltage (2) IC = 100 A IC = 1 mA IE = 100 A 4N25 ICEO(dark) (2) VCE = 10 V, (base open) 4N26 4N27 4N28 ICBO(dark) (2) Collector emitter capacitance COUPLER Isolation test voltage (2) Saturation voltage, collector emitter Resistance, input output (2) Capacitance, input output Peak, 60 Hz ICE = 2 mA, IF = 50 mA VIO = 500 V f = 1 MHz VIO VCE(sat) RIO CIO 100 0.6 5000 0.5 V V G pF VCB = 10 V, (emitter open) VCE = 0 CCE BVCBO BVCEO BVECO 70 30 7 5 5 5 10 2 6 50 50 50 100 20 V V V nA nA nA nA nA pF IF = 50 mA VR = 3 V VR = 0 V VF IR CO 1.3 0.1 25 1.5 100 V A pF TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Notes (1) T amb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. Document Number: 83725 Rev. 1.8, 07-Jan-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 133 4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection CURRENT TRANSFER RATIO PARAMETER (1) TEST CONDITION PART 4N25 4N26 4N27 4N28 SYMBOL CTRDC CTRDC CTRDC CTRDC MIN. 20 20 10 10 TYP. 50 50 30 30 MAX. UNIT % % % % DC current transfer ratio VCE = 10 V, IF = 10 mA Note (1) Indicates JEDEC registered values. SWITCHING CHARACTERISTICS PARAMETER Rise and fall times TEST CONDITION VCE = 10 V, IF = 10 mA, RL = 100 SYMBOL tr, tf MIN. TYP. 2 MAX. UNIT s TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1.4 1.5 VF -Forward Voltage (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 1 NCTR - Normalized CTR TA = - 55 C TA = 25 C Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 50 C 0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100 TA = 85 C 10 100 i4n25_01 IF - Forward Current (mA) i4n25_03 IF - LED Current (mA) Fig. 1 - Forward Voltage vs. Forward Current Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current 1.5 NCTR - Normalized CTR 1.0 TA = 25 C NCTR - Normalized CTR Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) = 0.4 V 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 70 C 0.5 NCTR(SAT) NCTR 0.0 0 1 10 100 0.5 NCTR(SAT) NCTR 0.0 0.1 i4n25_04 1 10 100 i4n25_02 IF - LED Current (mA) IF - LED Current (mA) Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 134 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83725 Rev. 1.8, 07-Jan-10 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection 1.5 NCTRcb - Normalized CTRcb NCTR - Normalized CTR Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 85 C 1.5 Normalized to: VCB = 9.3 V, IF = 10 mA, TA = 25 C 1.0 0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100 0.5 25 C 50 C 70 C 0.0 0.1 1 10 100 i4n25_05 IF - LED Current (mA) i4n25_08 IF - LED Current (mA) Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current Fig. 8 - Normalized CTRcb vs. LED Current and Temperature 35 10 ICE - Collector Current (mA) 25 20 15 25 C 10 5 0 0 10 Normalized Photocurrent 30 50 C 70 C 85 C Normalized to: IF = 10 mA, TA = 25 C 1 1 0. Nib, TA = - 20 C Nib, TA = 20 C Nib, TA = 50 C Nib, TA = 70 C 0.01 0.1 1 10 100 20 30 40 50 60 i4n25_06 IF - LED Current (mA) i4n25_09 IF - LED Current (mA) Fig. 6 - Collector Emitter Current vs. Temperature and LED Current Fig. 9 - Normalized Photocurrent vs. IF and Temperature 105 1.2 70 C ICEO - Collector Emitter (nA) 104 NhFE - Normalized hFE 103 10 2 1.0 25 C - 20 C 0.8 Normalized to: IB = 20 A, VCE = 10 V, TA = 25 C VCE = 10 V 101 100 10- 1 10- 2 - 20 0 20 40 60 80 100 Typical 0.6 0.4 1 i4n25_10 10 100 1000 i4n25_07 Tamb- Ambient Temperature (C) Ib - Base Current (A) Fig. 7 - Collector Emitter Leakage Current vs. Temperature Fig. 10 - Normalized Non-Saturated hFE vs. Base Current and Temperature Document Number: 83725 Rev. 1.8, 07-Jan-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 135 4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection NhFE(sat) - Normalized Saturated hFE 1.5 Normalized to: VCE = 10 V, Ib = 20 A TA = 25 C f = 10 kHz DF = 50 % VCC = 5 V 70 C 50 C 1.0 25 C - 20 C 0.5 VCE = 0.4 V 0.0 1 i4n25_11 RL VO IF = 10 mA 10 100 1000 i4n25_14 Ib - Base Current (A) Fig. 14 - Switching Schematic Fig. 11 - Normalized hFE vs. Base Current and Temperature 1000 2.5 tPLH- Propagation Delay (s) tPHL 100 2.0 10 tPLH 1.5 1 0.1 i4n25_12 1 10 1.0 100 RL - Collector Load Resistor (k) Fig. 12 - Propagation Delay vs. Collector Load Resistor IF tD VO tR tPLH VTH = 1.5 V tPHL i4n25_13 tS tF Fig. 13 - Switching Timing tPHL - Propagation Delay (s) IF = 10 mA, TA = 25 C VCC = 5.0 V, Vth = 1.5 V www.vishay.com 136 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83725 Rev. 1.8, 07-Jan-10 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection PACKAGE DIMENSIONS in millimeters 7.62 typ. 7.12 0.3 6.5 0.3 3.5 0.3 4.5 0.3 4.5 0.3 0.25 7.62 to 9.5 typ. 0.5 0.1 1.2 0.1 6 5 4 14771_2 1 23 PACKAGE MARKING 4N25 V YWW 24 21764-25 2.8 0.15 Document Number: 83725 Rev. 1.8, 07-Jan-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 137 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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